掺杂铕配合物的聚合物薄膜发光性能研究

Luminescent Properties of Eu-complex Doped Polymer Thin Films

通过把Eu(TTA)3Phen分别分散到MEH-PPV和PVK中制成薄膜,对它们的光致发光和电致发光性能进行了研究。结果表明Eu(TTA)3Phen/MEH-PPV体系无论是光致发光还是电致发光都仅能观察到MEH-PPV发光;而对于Eu(TTA)3Phen/PVK体系,其光致发光和电致发光都只观察到稀土铕(III)的发光,说明后者存在着从PVK到Eu(TTA)3Phen的F$rster能量转移过程。另一方面,在Eu(TTA)3Phen/PVK体系的电致发光器件中增加MEH-PPV作为空穴传递层,则大大提高了铕(III)的发光强度。

The photoluminescence （PL）and electroluminescence （EL）properties for the films of Eu （TTA）3Phen dispersed MEH-PPV and PVK were studied in this work. In the case of Eu （TTA）3Phen/MEH-PPV, only the emission from MEHPPV was observed in the processes of both PL and EL. However, in the case of Eu（TTA）3Phen/PVK, the emission of Eu （Ⅲ）was detected in the both processes suggesting the occurrence of Forster energy transfer from PVK to Eu（TTA）3Phen. On the other hand, it was proved that MEH-PPV could be used as a hole transfer layer in the device with the light emitting layer of Eu（TTA）3Phen doped PVK and enhance the emission of Eu（Ⅲ）obviously.