摘要
采用无模板电化学沉积,以n型(100)硅片为衬底,生成ZnO纳米柱阵列,并在不同条件下进行二次生长,分别在纳米柱表面生成一维针尖与二维薄膜结构.通过场发射扫描电镜图片(FESEM)和X光散射谱(XRD)研究了二次生长机理.结果表明,电流密度高低控制ZnO二次生长形貌:大沉积电流在纳米柱表面生成沿c轴取向针尖;小电流则容易形成沿a轴取向薄膜结构.
ZnO nanorod arrays (NRAs) covered with 1-dimension (l-D) nano-tapers or 2-D nanofilms have been achieved onto the n-type (100) silicon substrates via non-template electrochemical deposition by two steps. The growth mechanisms were studied by filed-emission SEM (FE-SEM) and X- ray Diffraction (XRD). The results show that the current density applied in the secondary depositional step determines the final structure:the high current density leads the ZnO nano-tapers to grow along caxis; otherwise,the low current density results in the a-axis growth.
出处
《聊城大学学报(自然科学版)》
2008年第2期78-81,共4页
Journal of Liaocheng University:Natural Science Edition
关键词
ZnO纳米柱阵列
二次生长
无模板
电化学沉积
ZnO nanorod arrays, secondary growth, non-template, electrochemical deposition