热丝和射频等离子体化学气相沉积法制备定向碳纳米管薄膜

Synthesis of Aligned Carbon Nanotubes Film by Plasma-Enhanced Hot Filament Chemical Vapor Deposition

采用热丝和射频等离子体复合化学气相沉积设备（PKHF-CVD），以CH4、H2和N2为反应气体，在较低衬底温度下（500℃），用简单的催化剂制备方法——旋涂法在硅片上涂覆Ni（NO3）2溶液，经热处理及H2还原后的Ni颗粒为催化剂，在硅衬底上制备出了垂直于硅片且定向生长的碳纳米管薄膜。扫描电子显微镜（SEM）和透射电子显微镜（TEM）结果显示，1mol／l的硝酸镍溶液旋涂硅片所得催化剂制得的碳纳米管管径为30-50nm，长度超过4μm，定向性好，并用拉曼光谱（Raman）对不同摩尔浓度Ni（NO3）2溶液条件下制备的碳纳米管薄膜样品进行了表征。

Aligned carbon nanotubes （ACNTs） films are grown at low substrate temperature （500℃ ） by plasmaenhanced hot filament chemical vapor deposition （PE-HF-CVD） method. A gas mixture of methane, hydrogen and nitrogen is used as the reaction gas, with nickel particles prepared by spin coating nickel nitrate solution on silicon, heat treatment and deoxidization with H2 as catalyzer. The carbon nanotubes prepared by 1 mol/l nickel nitrate solution are well aligned shown by scanning electron microscope （SEM） and transmission electron microscope （TEM） with 30-50 nm diameter, more than 4 μm long. Raman spectrum is used to display the carbon nanotubes film samples prepared by different concentrations of nickel nitrate solution.