高速偏放系统噪声抑制技术的研究

Study on Noise Suppression Technology for High-speed Deflection Subsystem

为使亚微米电子束曝光机的高速偏放系统寻址率达到6 MHz,噪声小于200μV的技术指标,从偏转放大器的设计、信号传输、D/A转换和系统的屏蔽、隔离等几方面考虑,对噪声的产生进行分析研究,采取相应的处理措施、实现机制及实验结果,提出了具体的噪声抑制技术解决方法。进而可使整机系统的技术指标得到很好的提高和改进。这项研究对今后该项目的研制有一定的参考意义。

To improve the resolution of submicron electron beam lithography system. Several noise absorbing technologies in designing its high-speed electronic deflection system are discussed and experimented. They are valid when the writing speed is under 6 MHz and the noise P-P value is restrained to 200 μV.the overall Performance of the submicron electron beam lithography systems is improved.