微球体尺度对硅片表面改性效果的影响

Effect of Micro-quartz Balls Scale to Silicon Wafers and Its Modified Layer

以单晶硅(110)和C+注入硅片后形成的表面改性层为研究对象,对C+注入单晶硅后的离子分布深度概率进行模拟计算,选择不同直径尺度的SiO2球与其配副,在UMT-II微摩擦磨损试验机上开展微载荷和不同球径尺度下的摩擦磨损试验,分析C+注入前后硅片的摩擦系数变化规律,在MicroXAMTM超高精度三维轮廓仪和S-3000N型扫描电镜上观察硅片磨损后的微观形貌。结果表明,C+注入对单晶硅表面的摩擦磨损性能改善明显,改善效果与施加的微载荷和接触应力相关。载荷小于0.1 N时,C+注入后硅片的减摩效果不明显;载荷大于0.2 N时,C+注入后硅片的耐磨性显著提高,其磨损机理主要为磨粒磨损和粘着磨损。

Single crystal silicon and its modified layer after C^＋- implanted were taken as the research examples and the ion probability of depth was simulated. The friction and wear tests were performed on UMT-II Microtribometer, which were carried out between the different scales of quartz balls and silicon wafers before and after C^＋ - implantation under micro-scale loads. The change rules of friction coefficient before and after C^＋ - implantation were studied. The morphologies of worn surface were observed with the S-3000N scanning electron microscope and MicroXAMTM ultra-high precision 3D profiler. The results indicate that C^＋ - implantation improve the tribological properties of silicon wafers. The modification effects are related to the contact load and contact stress. It is not remarkable when the contact load is less than 0.1 N while it is significant when the contact load is more than 0.2 N. The main wear mechanisms of silicon wafers are both of abrasive wear and adhesive wear.