摘要
实验研究了表面粗糙度、侧壁垂直度与各刻蚀参量之间的关系,通过对刻蚀效果的分析,发现在低功率、高CHF3含量、低压强的情况下能获得最小的表面粗糙度;在高功率、50%CHF3含量、低压强的情况下能获得较陡直的波导侧壁。利用优化的刻蚀条件,对PMMA进行刻蚀,得到了均方根粗糙度小、侧壁陡直的波导。实验发现,该刻蚀条件对其他聚合物光波导材料的刻蚀也具有一定的指导意义。
The experimental process for the reactive ion etching of PMMA was presented. The effect of RF power （content of CHF3, gas pressure） on surface roughness and sidewall angle was studied. After analyzing the etching results, the condition of low RF power, high content of CHF3, low gas pressure was found to obtain the lowest surface roughness and the condition of high RF power,50% content of CHF3, low gas pressure was found to obtain the vertical sidewall. Under the optimized etching condition, channel waveguide and Y-branch waveguide were obtained, of which the root mean square roughness was lower than 70 nm and the sidewall was nearly vertical. The same technological parameters were found to be also useful for the other polymer waveguide material.
出处
《微细加工技术》
EI
2008年第3期5-9,共5页
Microfabrication Technology
基金
教育部科学技术研究重点项目资助(104196)
