摘要
首先用CVD法制备金刚石厚膜,接着在其表面利用氢等离子体辅助刻蚀,然后在铁薄膜的催石墨化作用下,对金刚石膜的表面进行了选择性的刻蚀。结果表明,在氢等离子体的辅助作用下,铁薄膜可以持续对CVD金刚石膜进行刻蚀;如果控制铁薄膜的形状和厚度,可以实现对CVD金刚石膜表面较精确的图形化刻蚀。该技术有望成为一种新的刻蚀金刚石膜的方法。
CVD diamond is a promising functional material and has attracted increasing interest, but it is so extrahard and chemically stable that it is difficult to be etched and fabricated. Thus, the technique of morphologically machining CVD diamond is one of the key technique in realizing diamond devices manufacture. Thick polycrystalline diamond films, deposited by microwave-plasma-enhanced chemical vapor deposition (MPCVD), were etched selectively in hydrogen plasma under the graphitization effect of thin iron film. The result indicats that this method can etch the CVD diamond duratively. Morphologically machining for CVD diamond can be carried out exactly if the shape and thickness of iron film are controled. This method would turn into a promising method of morphologically machining for CVD diamond.
出处
《微细加工技术》
2008年第3期25-29,共5页
Microfabrication Technology
基金
国家自然科学基金资助项目(50572075)
湖北省教育厅2004年创新团队项目资助
湖北省教育厅资助项目(Q20081505)
关键词
金刚石膜
图形化加工
刻蚀
等离子体
diamond film
morphologically machining
etching
plasma