摘要
针对传统直流稳压电源无法适应各工业生产领域需求的缺点,详细介绍了以脉冲宽度调制(PWM)控制芯片SG3525A控制IR2110驱动全桥式功率金属氧化物半导体场效应晶体管(MOSFET)而构成的高频逆变主电路系统,并配合供电电路、过流保护电路、光隔离电路,设计出了光隔离型的DC/DC开关电源稳压系统,简单讨论了逆变后产生的谐波污染问题,最后,进行了仿真实验。仿真结果表明,该稳压系统具有很好的抑制谐波和稳定输出电压的作用。
Aiming at the fact that the traditional DC regulated power supply can＇t adaption the requirements from all industrial production field, the high-frequency inverter circuit formed by the control chip SG3525A of pulse width modulation （PWM） to control IR2110 to motivate the full bridge metal oxide semiconductor field effect transistor（MOSFET） was described With the power supply circuit, over-current protect circuit, optical isolated circuit, the DC/DC switch power supply system of optical isolated was designed. The harmonics contaminated problem caused after the inverter was also discussed simply at last. The results verify that the system has good functions of anticontaminate and stable output voltage.
出处
《机电工程》
CAS
2008年第9期18-20,40,共4页
Journal of Mechanical & Electrical Engineering
关键词
高频逆变电路
脉冲宽度调制
谐波污染
PID调节
金属氧化物半导体场效应晶体管
high frequency inverter
pulse width modulation （PWM）
harmonics contaminated
PID modulation
metal oxide semiconductor field effect transistor（MOSFET）
