RESURF 二极管的低温优化模型

An Optimized Analytical Model of RESURF pn Diodes for Cryogenic Operation

首次建立了ＲＥＳＵＲＦ二极管的低温优化模型，推导出７７Ｋ～３００Ｋ范围内击穿电压和漂移区长度的优化公式，给出了一定耐压下最小漂移区长度随温度的变化曲线。该模型可应用于ＬＤＭＯＳＴ和ＬＩＧＢＴ等ＲＥＳＵＲＦ器件的低温优化设计。

This paper provides an optimized analytical model of RESURF pn diodes for cryogenic operation for the first time,and derives expressions of breakdown voltage and drift region length over a temperature range of 77K～300K,and gives curves for minimum drift region length variation with temperature.The model presented will provide a good tool for cryogenic optimum design of RESURF devices,such as LDMOST and LIGBT.