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一种改进了碰撞电离的超高速InP基SHBT SDD模型

A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization
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摘要 从物理机制上分析了超高速InP/InGaAs SHBT碰撞电离与温度的关系,通过加入表示温度的参数和简化电场计算,得到一种改进的碰撞电离模型.同时针对自有工艺和器件特性,采用SDD(symbolically defined device)技术建立了一个包括碰撞电离和自热效应的InP/InGaAs SHBT的直流模型.模型内嵌入HP-ADS中仿真并与测试结果进行比较,准确地拟合了InP/InGaAs SHBT的器件特性. This paper investigates the relationship between the impact ionization and temperature in ultra high-speed InP-based SH- BTs. Considering the effect of temperature, an improved equation of the multiplication factor for InP-based HBTs is derived at an approximation of the electric field. A new SDD model including impact ionization and self-heating effects is developed for ultra highspeed InP-based SHBTs. The simulation result is consistent with the experimental data,indicating the accurate predictions of the model.
作者 葛霁 金智 刘新宇 程伟 王显泰 陈高鹏 吴德馨
机构地区 中国科学院微电子研究所
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第9期1799-1803,共5页 半导体学报（英文版）
基金 国家重点基础研究发展规划资助项目(批准号:2002CB311902)~~
关键词 碰撞电离 温度依赖 超高速InP基SHBT SDD模型 impact ionization temperature dependent ultra high-speed InP-based SHBTs SDD model
分类号 TN401 [电子电信—微电子学与固体电子学]
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参考文献15

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二级参考文献18

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共引文献1

Journal of Semiconductors
2008年 第9期

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