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Simulation of plasma doping process by using the localized molecular dynamics method

Simulation of plasma doping process by using the localized molecular dynamics method
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摘要 Plasma doping is the candidate for semiconductor doping. Accurate simulation of the doping technology is needed for the advanced integrated circuit manufacturing. In this paper, the plasma doping process simulation is performed by using the localized molecular dynamics method. Models that involve the statistics of the implanted compositions, angles and energies are developed. The effect of the model on simulation results is studied. The simulation results about the doping concentration profile are supported by experimental data. Plasma doping is the candidate for semiconductor doping. Accurate simulation of the doping technology is needed for the advanced integrated circuit manufacturing. In this paper, the plasma doping process simulation is performed by using the localized molecular dynamics method. Models that involve the statistics of the implanted compositions, angles and energies are developed. The effect of the model on simulation results is studied. The simulation results about the doping concentration profile are supported by experimental data.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第9期3428-3432,共5页 中国物理B(英文版)
基金 supported by the National Natural Science Foundation of China (Grant Nos 60676022,60625403 and 90707006) State Key Program for Basic Research of China (Grant No 2006CB302701)
关键词 plasma doping SIMULATION molecular dynamics plasma doping, simulation, molecular dynamics
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参考文献21

  • 1Cor Claeys 2004 Proc. 17th Int. Conf. on VLSI Design (Mumbai, India) p275
  • 2Chu P K, Felch S B, Kellerman P, Sinclair F, Larson L A and Mizuno B 1999 Solid State Technol. 42 55
  • 3Kong S H, Jung H, Kim J E, Do S W, Oh J G, Hwang S H, Lee J G, Ku J C, Lee J H and Lee Y H 2007 Semiconductor Device Research Symposium (Maryland, USA) p1
  • 4Wang S, Xu X and Wang Y N 2007 Phys. Plasma 14 113501
  • 5Fang T Z, Jiang N and Wang L 2005 Chin. Phys. 14 2256
  • 6Huang Y X, Tian X B, Yang S Q, Fu Ricky and Chu K Paul 2007 Acta Phys. Sin. 56 4762
  • 7Wu Y Q and Xiao T Q 2006 Acta Phys. Sin. 55 3443
  • 8Dixon Tat-Kun Kwok 2007 IEEE Trans. Plasma Sci. 35 670
  • 9Chu P K 2000 Int. Workshop on Junction Technology (Chiba, Japan) p35
  • 10Nordlund K 1995 Comput. Mater. Sci. 3 448

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