摘要
A single ZnO nanowire with intrinsic oxygen vacancies is utilized to fabricate four-contact device with focus ion beam lithography technique. Cathodoluminescent spectra indicate strong near-UV and green emission at both room temperature and low temperatures. Experimental measurement shows the temperature-dependent conductivity of the ZnO nanowire at low temperatures （below 100 K）. The further theoretical analysis confirms that weak localization plays an important role in the electrical transport, which is attributed to the surface states induced by plenty of oxygen vacancies in ZnO nanowire.
A single ZnO nanowire with intrinsic oxygen vacancies is utilized to fabricate four-contact device with focus ion beam lithography technique. Cathodoluminescent spectra indicate strong near-UV and green emission at both room temperature and low temperatures. Experimental measurement shows the temperature-dependent conductivity of the ZnO nanowire at low temperatures （below 100 K）. The further theoretical analysis confirms that weak localization plays an important role in the electrical transport, which is attributed to the surface states induced by plenty of oxygen vacancies in ZnO nanowire.
基金
supported by the National Natural Science Foundation of China (Grant Nos 60771037 and 90406022)
the National High Technology Research and Development Program of China (Grant No 2008AA03Z309)
the National Key Basic Research Program of China (Grant Nos 2007CB936802 and 2007CB935503)
