266nm飞秒激光烧蚀单晶硅的分子动力学模拟

Molecular dynamics simulation of 266 nm femtosecond laser ablation of monocrystalline silicon

基于Stillinger-Weber(SW)势和"x-分区"模型,用分子动力学方法模拟了266 nm飞秒激光烧蚀单晶硅的过程,给出了烧蚀过程的物理图像,烧蚀过程中材料内部缺陷的产生与发展最终导致整层材料被移除。对比研究了烧蚀材料中不同区域粒子的运动轨迹,结果体现了在固、液、气不同状态下粒子的运动特征。模拟了激光诱导应力波的传播,其速度为8.18 km/s。

Based on Stillinger-Weber（SW） potential and ＂x-section＂ model, femtosecond laser ablation of monoerystalline silicon was simulated using molecular dynamics method. Snapshots of ablation process were obtained which showed that the emergence and development of internal defects caused a slice of silicon to be removed from the bulk. Traces of atoms in different sections of ablated material were compared which described the characteristics of atoms under states of liquid, solid and gas. Laserinduced stress wave whose velocity was 8.18 km/s was also observed.