Sm掺杂La_2Mo_2O_9的合成及其导电性

Synthesis and Conductivity of La_2Mo_2O_9 Doped by Sm

用固相反应法合成了La2-xSmxMo2O9（x=0～2）。室温XRD测试结果表明，在掺Sm计量x≥0．9时，出现杂质相的衍射峰；x≤0．85时，晶胞参数随Sm掺杂计量增加而线性降低。用直流四电极法和离子阻塞法在723～1173K温度范围测定了合成试样的电导率，结果表明电子电导率和电导率均随Sm掺杂量增大而降低，掺Sm增大了电导活化能和电子电导活化能。

La2-xSmxMo2O9 （x=0-2） were prepared by method of the solid state reaction. Room temperature XRD measurement showed that the diffraction peaks of impurities appeared when doping amount of samarium exceeded 0. 9 of mass fraction. Fourprobe DC technique and ion blocking method were used to measure the total electrical conductivity and the electronic conductivity within ：the temperature of 723 - 1 173 K. The electronic conductivity and the electrical conductivity decreased with increasing amount of samarium, while both the activation energy of electronic conductivity and electrical conductivity increased with doped samarium.