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Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells

Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells
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摘要 We investigate intersubband Rabi flopping in modulation-doped semiconductor quantum wells with and without the propagation effects, respectively. It is shown that propagation effects have a larger impact on Rabi flopping than the nonlinearities rooted from electron-electron interactions in multiple quantum wells. By using ultrashort rr pulses, an almost complete population inversion exists if the propagation effects are not considered; while no complete population inversion occurs in the presence of propagation effects. Furthermore, the magnitude of the impact of propagation effects may be controlled by varying the carrier density. We investigate intersubband Rabi flopping in modulation-doped semiconductor quantum wells with and without the propagation effects, respectively. It is shown that propagation effects have a larger impact on Rabi flopping than the nonlinearities rooted from electron-electron interactions in multiple quantum wells. By using ultrashort rr pulses, an almost complete population inversion exists if the propagation effects are not considered; while no complete population inversion occurs in the presence of propagation effects. Furthermore, the magnitude of the impact of propagation effects may be controlled by varying the carrier density.
出处 《Chinese Optics Letters》 SCIE EI CAS CSCD 2008年第9期689-692,共4页 中国光学快报(英文版)
基金 the National Natural Sciences Foundation of China under Grant No.60708008.
关键词 Electric conductivity ELECTRON electron interactions Laser pulses MODULATION Semiconductor materials Semiconductor quantum wires WELLS Electric conductivity Electron electron interactions Laser pulses Modulation Semiconductor materials Semiconductor quantum wires Wells
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