掺杂水平对ZnO基变阻器电学性能的影响

Influence of doping level on electrical properties of ZnO-based composite varistor

根据相图规则设计、制备了三个系列不同Bi2O3与Sb2O3掺杂水平的ZnO基复合变阻器材料,研究了掺杂对氧化锌复合陶瓷电学性能的影响.研究发现,当Sb元素掺杂水平较低时,随着Sb2O3掺杂量的增加,所得氧化锌基变阻器材料漏电流的变化也很小,非线性系数(非线性系数αL和击穿非线性系数αB)将减小,而场强(场强EL和击穿场强EB)将增大;但是,当Sb元素掺杂量较高时,随着更多Sb2O3的掺入,漏电流急剧增大,αL和αB进一步减小,而EL和EB将突然减小.随着Bi元素掺杂水平的提高,所得氧化锌基变阻器材料漏电流增大,αL和αB增大,而EL和EB减小.

ZnO-based varistors with different doping levels of antimony and bismuth are prepared and their electrical properties are measured. It is found that when the doping level of Sb is small, with the amount of Sb2O3 increasing, the leakage current changes little, both nonlinear coefficient aL and breakdown nonlinear coefficient αB decrease but both field strength EL and breakdown field strength EB increase; when the doping level of Sb is high, with more Sb2O3 added, the leakage current increases sharply, αL and αB decrease further, and EL and EB drop down suddenly. With doping level of Bi increasing, the leakage current increases, αL and αB increase,but EL and EB decrease.