摘要
介绍了2／2.5μm硅栅CMOS高速八位总线驱动器（L82C82／83）的工艺技术，特别是工艺设计和工艺控制；讨论了关键工艺的控制条件、方法及试验结果。
In this Paper, the 2/2. 5μm Silicon - gate CMOS Process technology for high-Speed 8-bit general bus driver (negative driver) is introduced. Especially,the Process design and control for this devices are described with respect of the Key Process Methods,conditions and experimental results.
出处
《微处理机》
1997年第4期12-15,共4页
Microprocessors
关键词
CMOS
集成电路
总线驱动器
工艺
CMOS technology,threshold Voltage,gate oxide,field oxide
