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CdZnTe表面处理对其引线超声焊接质量的影响

Influence of Surface Treatment Technology on the Ultrasonic Welding Property Between the Down-lead and Au Electrode of CdZnTe Wafer
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摘要 采用扫描电镜及EDS测试研究了高电阻CdZnTe金电极与外引线的超声焊接工艺,探讨了CdZnTe表面处理工艺、接触电极厚度及焊接参数对引线超声焊接质量的影响规律。研究结果表明,经机械抛光表面处理的CdZnTe晶片,其金电极与外引线间容易实现超声焊接;CdZnTe电极厚度与引线焊合率之间呈抛物线关系,获得最佳焊接质量的电极厚度为180nm左右。楔入压力和焊接功率是影响CZT金电极与引线焊接质量的重要因素,当焊接功率为2W、焊接压力为60×10-3kg、焊接时间20ms和烧球强度1.5W时,易获得良好的CdZnTe金电极与引线焊接接头。 By means of scanning electron microscope and EDS test, the factors which have a great influence on the ultrasonic wire bonding between the CdZnTe(CZT) electrode and the Au down-lead are studied, such as surface treatment technology, electrode thickness of CZT wafer and ultrasonic welding parameters. The results show that CZT wafer with the mechanical polishing treatment was easier to achieve the ultrasonic wire bonding between the Au electrode of CZT and the down-lead. Moreover, the weldbility between the CZT electrode thickness and the down-lead shows a kind of parabola relationship. That's to say, there should be an optimal CZT electrode thickness (180nm in this research) for the high bonding rate when the electrode treatment technology had been fixed up. Besides, the welding power and the wedge pressure influence the ultrasonic wire bonding rate greatly. In this test, the optimal welding parameters were as follows: the power 2W, the pressure 60X 10^-3kg, welding time 20ms and the power for fire ball formation 1.5W.
出处 《材料工程》 EI CAS CSCD 北大核心 2008年第9期9-12,共4页 Journal of Materials Engineering
基金 国家自然科学基金资助项目(50772091) 新世纪人才支持计划(NCET-07-0689) 陕西省自然科学基金(2007E 05)
关键词 CDZNTE晶片 超声焊接 表面处理 电极厚度 CdZnTe wafer ultrasonic wire bonding surface treatment electrode thickness
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参考文献11

  • 1HUTCHHY J A, GARNER C M. A Latest technology Roadmap guides development of new devices and materials[J]. Solid State Technology, 2006, 49(1): 31-34.
  • 2JONES L T, WOOLLAM P B. Resolution improvement in CdTe gamma detectors using pusle-shape discrimination[J]. Nucl Instr and Meth. 1975, 124:591-595.
  • 3NEMIROVSKY Y, ASA G, GORELIK J, et al. Recent progress in n-type CdZnTe arrays for gamma-ray spectroscopy [J]. Nuclear Instruments and Methods in Physics Research, Section A, 2001, 458(1-2) : 325--333.
  • 4PASTUOVIC Z, JAKSIC M, JAMES R B, et al. Influence of electrical contacts on charge collection profiles in CdZnTe studied by IBIC [J]. Nuclear Instruments and Methods in Physics Research, 2001, 458:254-261.
  • 5NARITE T, BLOSER P F, GRINDLAY J E, et al. Development of gold contacted flip-chip detectors with IMARAD CZT [J]. Proceedings of SPIE, 2000, 4141 : 89-96.
  • 6阮世勋,雷运青.金属超声焊及应用[J].新技术新工艺,2004(12):38-40. 被引量:13
  • 7计红军,李明雨,王春青.超声引线键合点形态及界面金属学特征[J].电子工艺技术,2005,26(5):249-253. 被引量:9
  • 8朱正宇,胡巧声.半导体封装超声波压焊的工艺参数优化[J].电子工业专用设备,2006,35(3):55-60. 被引量:7
  • 9KIM K S, SONG J Y, CHUNG E K, et al. Relationship between mechanical properties and microstructure of ultra-fine gold bonding wires [J]. Mechanics of Materials, 2006, 38: 119-127.
  • 10HUANG Q J, LI N, M, LIU D M. Effects of process parameters on bondability in ultrasonic ball bonding[J]. Scripta Mater, 2006,54:293-297.

二级参考文献22

  • 1李琼,徐静芳,范忠.超声焊接的研究和工艺模型[J].华东师范大学学报(自然科学版),1995(3):41-49. 被引量:1
  • 2[2]Harman G G,Leedy K U.Ann.Prce.IEE Relibility Physies.1972:49.
  • 3王建明.功率超声技术的现状与展望[J].声学技术,1997,16(1):46-48. 被引量:14
  • 4Harman G G. Metallurgical bonding systems for hightemperature electronics[ J]. IEEE Press, 1999. 752 - 69.
  • 5Philofsky E. Intermetallic formation in gold - aluminum system [ J ]. Solid - state electron, 1970,13:1391 - 9.
  • 6Frφydis Oldervoll, Frode Strisland. Wire -bond failure mechanisms in plastic encapsulated microcircuits and ceramic hybrids at high temperatures [J ]. Microelectronics Reliability ,2004, 44:1009 - 1015.
  • 7James E Krzanowski. A transmission electron microscopy study of ultrasonic wire bonding [ J ]. IEEE Trans CPMT,1990,13(1): 176 -181.
  • 8Kreye H. Melting phenomena in solid - state welding process [ J ]. Welding, 1975.154 - 158.
  • 9George G Harman, John albers. The ultrasonic welding mechanism as applied to aluminum - and gold - wire bonding in microelectronics [ J ]. IEEE Trans PHP, 1977,13(4) :406 -412.
  • 10Joshi K C. The formation of ultrasonic bonds between metals[ J]. Welding, 1971,50:840 - 848.

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