摘要
研究了用化学气相淀积方法制备的SnO_2薄膜的组成。晶体结构和气敏性能。发现薄膜为多晶结构,在薄膜生长过程中,(200)、(110)晶面择优生长;薄膜对H_2的气敏灵敏度随温度的升高而增加,并存在一合适的工作温度范围:100～250℃。
The chemical composition, crystal structure and gas sensitive character of the thin SnO_2 films by CVD method have been studied. It is discovered that the structure of the film is polycrystalline. These films are prefcrentially orientedin the (200) and (110) direc-tions in growing process. Gas sensitivity of the films to H_2 will increase with increasing temperature within the optimum temperature range 100～250℃
基金
自家自然科学基金
编号 2870342
关键词
二氧化锡
化学气相淀积
薄膜
chemical vapor deposition
tin oxide
thin film
structure
gas sensitivity
