等离子体增强液态源MOCVD系统的研制

Design and Construction of Metal Organic Chemical Vapor Deposition System with Plasma Enhanced Liquid Source

本文介绍了一台新型等离子体增强液态源MOCVD系统。系统由液态源汽化装置、反应室、等离子体产生装置、真空系统及自动控制系统等主要部分组成。该系统采用了由超声雾化器和加热腔组成的液态源汽化装置,将液态源转变成气态供给反应室沉积薄膜。为了提高金属有机物的化学反应活性,在有布气盒结构的反应室基础上,引入了射频等离子体。真空控制采用了由蝶阀、真空规和机械增压泵组成的闭环控制系统。自动控制系统的设计基于PLC和触摸屏,通过触摸屏完成工艺参数设置及实时数据显示,通过PLC完成系统控制。使用该液体输送MOCVD系统在Pt/Ti/SiO2/Si衬底上沉积了锆钛酸铅铁电薄膜。实际应用证明,该系统结构紧凑,高度自动化以及控制灵活,适合于制备高质量的复合金属氧化物薄膜。

The conventional metal organic chemical vapor deposition （MOCVD） system has been integrated with several sub-units, including a liquid vaporizer, a reaction chamber, a plasma generator and an automatic control unit, to improve its performance in film growth. Technical discussions focused on design and construction of the vaporizer, plasma generator and control unit. We have succeeded in depositing high quality Pb（Zr, Ti）03 ferroelectric （PZT） thin films on Pt/Ti/SiO2 substrate with the newly developed, lab-made plasma enhanced liquid source MOCVD system. Its strengths, such as compact structure, high automation, user-friendliness and easy maintenance, were also discussed.