基于线算法的ICP深反应离子刻蚀模型

Modeling of Deep Reactive Ion Etching by Inductively Coupled Plasma with String Algorithm

电感耦合等离子体(ICP)刻蚀是目前集成电路与微机电系统制造的关键工艺之一。利用一种改进的复合交替深刻蚀(TMDE)模型对ICP深反应离子刻蚀(Deep-RIE)进行了工艺仿真建模。根据深反应离子刻蚀中Footing效应的实验特征,提出了针对这一现象的表面描述方程,并借助实验手段确定了该表面描述方程中的参数,从而为模型添加了一种简单有效的Footing效应模拟模块。最后对Deep-RIE和Footing效应刻蚀表面进行模拟,验证了模型的有效性和可用性。

The deep reactive ion etching （deep-RIE） by inductively coupled plasma （ICP） has been modeled and simulated based on the String Algorithm. The time multiplexed etching model （TMDE） was modified and an equation, describing the surface topography, was derived with variables determined by data fitting of the experimental measurements, in which the footing effect was fully considered. Moreover, a module for the footing effect simulation was included in the simulation. The simulated results of the deep-reactive ion etched surface, affected by the footing effect, agree fairly well with the experimental observations.