半圆形半导体激光器阵列准直工艺方法研究

Study of Collimation Technique for Semi-Circle Semiconductor Laser Array

通过试验,分析并验证了半圆形半导体激光器阵列准直后光束指向发生偏移的原因,证明了烧结过程对准直光束指向性的影响。为避免烧结过程对准直工艺的影响,设计了一种的新的半圆形半导体激光器阵列的准直工艺方法,并设计了半圆形半导体激光器阵列准直工艺平台,实现了对半圆形半导体激光器在组装、烧结后进行阵列准直;同时采用两点一线的原理,设计了用于半圆形半导体激光器阵列准直的双屏监测方法,有效提高了准直的指向准确性和工作效率。通过一对半圆形器件对Ф3mm的固体棒进行泵浦试验,工艺改进后的泵浦增益有了明显提高,泵浦功率为2.3kW时,增益提高了大约15%。

The reason of the beam excursion after collimating the semicircular semiconductor laser array was analyzed and verified by the experiment. The effects of the die bonding on the directivity of the collimation beam were proved. In order to avoid the effect of die bonding on the collimation technique, a new alignment technique for the semicircular semiconductor laser array and the technology platform for collimation were designed, and the collimation to semicircular semiconductor laser array after packaging and die bonding was realized. With the principle of the deuce in a line, the double screen inspecting method for semicircular semiconductor laser array collimation was desinged to improve the directivity of the collimating beam and the working efficiency. Though the pumping experiment with a pair of semicircular devices in the 3 mm rod, the pump gain increases about 15% at the pump power of 2.3 kW after improving the collimation technique.