摘要
在离子注入技术中，获得准确注入剂量的关键是如何消除二次电子对束流测量带来的影响．通过实验证实了二次电子对正离子束的影响．采用了在靶室内加入侧向正电场的方法。
In ion implantation, the key for getting accurate quantity of implant ion current is how to decrease the second electron affect caused by the implant ion current measurement. In this paper we confirm the effect of second electron on positive ion current through the experiment. The problem which ion current could not be accurately measured was validly resolved, by applying side positive electric field in target Lab.
基金
天津市科委重点学科资助项目
