交流法短沟道MOS器件模型参数计算机自动提取

The Computer Automatic Extraction of the Short-Channel MOSFET Modeling Parameters By Using AC Measurement Method

本文介绍了一种新型的交流法短沟道MOS器件参数计算机自动提取技术.它能快速而又精确地提取短沟道MOS器件的源漏串联电阻R_T、表面迁移率μ_0、迁移率退化因子θ、阈值电压V_T、平均表面态密度D_(it)等SPICE模拟程序中的模型参数.对LDD、硅栅CMOS等短沟道MOS器件测试结果表明它还具有抗干扰能力强之特点,是一种LSI-MOS电路制造的有效的CAM手段.

An automatic extraction technique of the short-channel MOSFET modeling parameters by using AC measurement method is introduced.It can quickly and accurately determine β_0 ,θ, R_T, D_(it), and the MOS modeling parameters of SPICE 2G5.The experimental results of LDD and other short-channel MOS devices show that this technique has strong abilities for immunity and is an effective CAM means for LSI MOS circuit fabrication.