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SiGe外延层中硼注入和退火

B-implantation and annealing for SiGe epilayers
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摘要 对采用快速加热、超低压-化学汽相淀积(RTP/VLP-CVD)技术生长的Si0.8Ge0.2/Si应变外延层进行硼注入,注入能量为40keV,注入剂量为2.5×1014cm-2。然后,进行不同时间、不同温度的快热退火(RTA)和稳态炉退火。结果表明,RTA优于稳态炉退火,其最佳条件是:退火时间为10s,退火温度范围为750℃~850℃,或者退火温度为700℃,时间为40s,基本可消除由注入引起的损伤,获得约300cm2/V·s的空穴迁移率以及近100%的激活率。 Si 0.8 Ge 0.2 strained epilayers were grown on Si substrates by rapid thermal process/very low pressure-chemical vaper deposition(RTP/VLP-CVD) and then implantated with Boron were at 40 keV for a dose of 2.5×10 14 cm -2 .Rapid thermal annealing (RTA)and steady-state furnace annealing with different temperature and time period were performed for comparison.Results indicate that RTA is better than furnace annealing.A implantation induced damage can be removed at annealing temperature of 750 ℃~850 ℃for 10 s or at 700 ℃for 40 s.A carrier mobility of about 300 cm 2/V·s was obtained with an activity of approximately 100%.
机构地区 南京大学
出处 《半导体光电》 EI CAS CSCD 北大核心 1997年第5期343-345,共3页 Semiconductor Optoelectronics
基金 国家863计划
关键词 半导体材料 异质结 薄膜技术 掺杂技术 Semiconductor Materials,SiGe/Si Heterostructures,Film Technology,Doping Technique,B-implantation,Annealing
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参考文献3

  • 1Lie D Y C,Appl Phys Lett,1995年,66卷,5期,592页
  • 2Lie D Y C,J Appl Phys,1993年,74卷,10期,6039页
  • 3Zheng Y D,Proceedings of 20th International Conference on the Physics of Semiconductors,1990年

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