F007模拟集成电路的铝腐蚀失效及改进前后的分析对比

Aluminum Corrosion Failure of F0O7 Analog IC and Analytical Comparison Between DevicesBefore and After lmprovement

在对铝腐蚀失效因素分析的基础上,针对工艺、材料、钝化、封装气氛等几方面提出措施,并在单项试验取得成效后,再应用于F007模拟集成电路的生产过程。经过加速寿命对比试验和对试验后样品的观察分析,表明铝腐蚀失效得到了有效防止,改进后产品的中位寿命比原产品约有一个数量级的提高。

Based on studies of the aluminum corrosion failure, special steps were takenand aimed at the problems existed in processes, materials, passivation andencapsulation environment. After each step was examined and succeededpreliminarily, they were used into the fabrication processes of F007 IC. Theresults of accelerated life test have shown that aluminum corrosion failure wasprevented effectively. The median life of the improved devices was increased by9.2 times.