摘要
本文在考虑到界面态陷阱的基础上，建立了ＨＥＭＴ的静态和交流小信号解析模型，该模型能够正确地描述ＨＥＭＴ的Ｋｉｎｋ效应和低频偏移效应，并和实验符合相当好．文中还深入讨论了Ｉｎ组分和偏置的影响．
Static and AC small signal analytical models to describe correctly Kink effect and low frequency dispersion effect in HEMTs are established in this paper considering interface traps, also the effects of in contents and bias are studied theoretically. The theory in this paper matches the experiment dais very well.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1997年第11期14-17,共4页
Acta Electronica Sinica
关键词
晶体管
Knik效应
低频偏移效应
HEMT
High electron mobility transistor (HEMT), Model, Kink effect, Lom frequency dispersion effect
