InGaAs（P）应变多量子阱激光器的理论分析与优化设计

Theoretical Analysis and Optimum Design for InGaAs（P）Strained Multiple－Quantum－Well Lasers

本文从理论上分析计算并给出了ＩｎＧａＡｓ（Ｐ）应变多量子阱激光器的优化设计参数．考虑到多量子阱阱区的注入不均匀性，提出了一种新的分析和计算方法．对于激射波长为１．５５微米的１．５％压缩应变多量子阱激光器，最佳的阱数为四个，最佳腔长为５００微米左右．

The optimum design parameters of InGaAs(P)strained multiple-quantum-well lasers are presented .Taking the non-homogeneity of injection carriers and optical field into account, a new method of analysis and calculation is also provided.In the case of 1 .5% compressively strained lasers,the optimum number of wells is four,and the optimum lasers' cavity length is about 500 micrometers.