摘要
本文从理论上分析计算并给出了InGaAs(P)应变多量子阱激光器的优化设计参数.考虑到多量子阱阱区的注入不均匀性,提出了一种新的分析和计算方法.对于激射波长为1.55微米的1.5%压缩应变多量子阱激光器,最佳的阱数为四个,最佳腔长为500微米左右.
The optimum design parameters of InGaAs(P)strained multiple-quantum-well lasers are presented .Taking the non-homogeneity of injection carriers and optical field into account, a new method of analysis and calculation is also provided.In the case of 1 .5% compressively strained lasers,the optimum number of wells is four,and the optimum lasers' cavity length is about 500 micrometers.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1997年第11期32-35,共4页
Acta Electronica Sinica
基金
国家自然科学基金