摘要
用ＰＥＣＶＤ法在Ｓｉ衬底上沉积了纳米硅（ｎｃ－Ｓｉ：Ｈ）薄膜，其室温暗电导可达１０－３～１０－１Ω－１ｃｍ－１，高于本征单晶硅的电导，将其制成遂道二极管，其Ｉ－Ｖ曲线在７７Ｋ呈现出量子台阶，对这一新颖物理现象进行了定性解释．
The hydrogenated nanocrystalline silcon films (nc-Si:H) are deposited on silicon substrate byplasma enhanced chemical vapour deposition(PECVD) .The room temperature dark conductivity σof nc-Si: H is in the range of 10-3 -10-1Ω-cm1, higher than that of intrinsic silicon. Diodes consisting of nc-Si: H film are fabricated and their I-V curves show some quantum staircase below 77K. This novel physical features are explained qualitatively.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1997年第11期72-74,共3页
Acta Electronica Sinica
基金
国家自然科学基金
中科院半导体所超晶格实验室资助
