摘要
采用SiGe异质结结构提高晶体管的性能,分析了Ge对器件电流增益和频率特性提高的物理机制。综合考虑了Si1-xGex薄膜的稳定性、工艺特点和器件结构对Ge含量以及分布的要求和Ge组分的设计及其对器件电学特性的影响。从理论上推算了SiGe HBT的β和fT等主要特性参数,Ge的引入以及Ge的分布情况对提高这些参数有着显著的影响。Ge的引入对晶体管主要特性参数的提高使得SiGe HBT技术在微波射频等高频电子领域可以有更重要的应用前景。
SiGe heterojunction structure improves the performance of bipolar transistor. The mechanism of how Ge profiles impact the boost of current gain and frequency response was analyzed. Considering the impact of stability of Si1-xGex film, the technology and the structure of the device on Ge profile design for device electrical characteristics, the main characteristic parameters of β and fT for SiGe HBT was calculated. Introducing Ge and designing the Ge profile will affect these parameters positively. Ge improves the main characteristic parameters of the transistor was introduced; hence the SiGe HBT technology will be more essential in microwave and radio frequency electronic applications.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第8期683-687,共5页
Semiconductor Technology
