ESD与EMP对微波晶体管损伤机理研究

Study on the Effect of ESD and EMP Radiation Damage on Microwave Semiconductor Devices

主要论述了电子装备中易受静电放电(ESD)和电磁脉冲(EMP)损伤的微波半导体器件的失效模式和失效机理。实验与理论分析结果表明,电流放大系数hFE是ESD、EMP损伤的敏感参数;在ESD、EMP的作用下,器件进入雪崩击穿状态(反偏注入),从而诱发热电子注入效应,使hFE逐渐退化;BC结反偏时的失效能量低于EB结反偏时的失效能量,BC结是EMP损伤的较易损端口;改进器件的结构设计、提高器件抗ESD、EMP能量,可有效提高电子装备抗电磁脉冲的可靠性水平。

Damages caused by ESD or EMP on microwave semiconductor devices were discussed, and their main failure model and mechanisms were analyzed. The experimental and analysis results show that current amplification factor hFE is a more sensitive parameter of ESD or EMP; effeeted by ESD or EMP, the device will break into avalanche breakdown, which sequentially incite the injection effect of hot electron and finally result in degeneration of hFE; it is proved that BC junction is easier to be damaged than EB junction by ESD or EMP in experiments, because the failure energy of BC junction is less than that of EB while in state of reverse-bias; the ability of anti-EMP can be improved through reforming the design of electronic device which may increase the failune energy of ESD and EMP.