摘要
阐述了扫描电子显微镜在解决栅光刻在线监测中遇到的问题和解决过程。在充分的理论分析基础上,通过大量实验研究,克服了光刻胶在高能电子辐照下变形、变性的问题;削弱了光刻胶样品表面荷电对图像质量的影响;在观测"T"型栅的胶窗口时采用特殊的工作条件获得了三层胶的立体形貌图像,从而能够观察三层胶的内部结构。上述问题的解决和技术的改进实现了栅光刻工艺的在线监测;并为栅光刻工艺的稳定和改进、产品成品率的提高提供了大量数据和图像。
The problems of SEM （scanning electron microscope） application in semiconductor lithography process were discussed, analyzed and solved. On the basic of the detail theoretical analysis, the problem of photoresist deformation caused by high electron irradiation during online monitor of gate lithography process was overcome by an innovative method. This new method eliminates surface charge impact on the quality of the pictures and helps obtain the three dimensional pictures of triple layer photoresist under special working condition when photoresist window is under observation. The technology improvement meets the demand of online monitor of gate process and offers sufficient microscope pictures and data to stabilize gate process and improve yield.
出处
《微纳电子技术》
CAS
2008年第9期538-541,共4页
Micronanoelectronic Technology
关键词
扫描电子显微镜
栅光刻
二次电子
背散射电子
荷电
SEM （scanning electron microscope）
gate lithography
secondary electron
backscattering electron
charging
