摘要
本文报道了采用多晶硅电阻和扩散电阻组合而成的复合镇流电阻对硅微波功率器件进行二次发射极镇流的实验结果．
The experimental results of dual emitter ballasting using a complex emitter ballasting resistor which is provided by a diffused silicon resistor and a polysilicon resistor in silicon microwave power transistor are reported.
关键词
硅微波功率器件
二次发射极镇流
镇流电阻
Electric current control
Electron emission
Microwave devices
Transistors
