摘要
本文研究了n型硅阳极化的高选择和自终止工艺，并将该工艺用于形成多孔氧化硅全隔离SOI结构．采用这种FIPOS（FullIsolationbyPorousOxidizedSilicon）技术在n-／n＋／n-衬底上形成的SOI（SiliconOnInsulator）结构，其顶层硅岛厚度可控制在较广范围（从100nm到数μm），且硅岛宽度可大于100μm．XTEM结果显示顶层硅／氧化层界面非常平整和均匀．在硅膜厚300nm的FIPOS衬底上采用2μm硅栅工艺制备了N沟和P沟MOS晶体管和21级环形振荡器，环振的门延迟为396ps.
In this letter a highly selective and self-stopping porous silicon formation process on n-type silicon is studied and used to form FIPOS (Full Isolation by Porous Oxidized Silicon) SOI (Silicon On Insulator) structure. The SOI structure with wide range thick (from 100nm to several micrometers) and greater than 100 micrometer side width top silicon islands is fabricated by using FIPOS technique on n-/n+/n- substrates. The XTEM results have shown that the top silicon/oxide interface is relatively planar and uniform.N- and P- channel SOI/MOS transistors and 21 stage oscillator were fabricated in 300nm thick top silicon layer by 2μm silicon gate process. A ring-oscillator gate delay of 396ps has been achieved.
