摘要
本文研究了MZOS结构的电学性质及热处理效应，并进行了X线衍射分析和电子能谱分析．发现适当温度下的氧退火处理对改善ZnO膜的C轴对称性、降低Si表面有效电荷密度有显著效果．
The elcetrical properties and annealjng effects of MZOS structure are experimentally studied, and the X-ray diffraction diagram and the electron spectrum are presented. It is found that the annealing treatment at appropriatc temperature results in good effects in improving the c-axis symmetry of ZnO, as well as in decreasing the surface charge density.
关键词
MZOS结构
氧化锌
半导体薄膜技术
Annealing
Electric properties
Semiconducting films
Semiconductor devices
