摘要
生长温度500℃下，在Si（001）衬底上分子束外延自组织生长锗量子点．700℃退火20分钟后观察到其光致发光．原子力显微镜（AFM）和横截面试样透镜（XTEM）方法用于观察鼻子点的大小和密度．利用喇曼光谱观察不同温度退火引起的Ge与Si之间的互扩散．
Ge quantum dots were grown by self-organizing growth method on Si (001) substrate at a temperature of 500℃, its photoluminescence spectrum was observed after annealing at 700℃ for 20 min. Atomic force microscopy and cross-sectional transmissionelectron microscopy were used to observe the size and density of the quantum dots. Raman spectra were measured for the samples annealed at diffrent temperatures in order to observe the interdiffusion between Si and Ge atoms.
基金
国家自然科学基金
