耐蚀Zn-Al合金材料的组合材料芯片方法优选

Application of Combinatorial Material Chip Method in Screening of Anticorrosion Zn-Al Alloy

应用组合材料芯片方法,通过离子束溅射法制备了全组分范围的Zn-Al薄膜样品阵列.沉积得到的多层薄膜经370℃扩散处理2h形成合金薄膜.通过扫描俄歇能谱仪(AES)、X射线衍射仪(XRD)及扫描电子显微镜(SEM)对样品的成分、结构和形貌进行表征.结果显示,在低温退火后,合金薄膜成分均匀,结晶良好,表面致密.材料芯片上的样品在0.1mol·L-1氯化钠溶液中的极化电阻测试结果表明,对于全组分的Zn-Al合金薄膜,Al摩尔分数在87%附近的成分具有最高的极化电阻值.进一步的实验发现,在83%-86%这一较宽的摩尔分数区间内,极化电阻值均保持在105Ω·cm-2以上,比传统热镀锌镀层的极化电阻高1个数量级.

Using combinational chip method, all-components Zn-A1 film samples were prepared via ion beam sputtering. The as-deposited multilayer films were transformed into alloy films after annealing in Ar/H2 atmosphere for 2 h at 370 ℃. The compositom, structure, and morphology of the alloy films were characterized using Auger electron spectrum （ALES）, X-ray diffraction （XRD）, and scanning electron microscopy （SEM）. The results indicated that homogeneous alloy films with good crystallinity and dense surface were attained after low temperature annealing. The polarization resistance tests in 0.1 mol·L^-1 NaCl for characterization of anti-corrosion properties indicated that the Zn- Al alloy thin films with AI mole fraction of about 87% possessed the highest polarization resistance. Further experiments showed that the polarization resistances of Zn-Al alloy thin films with A1 mole fraction from 83% to 86% were all higher than 105Ω·cm^-2, which was one order higher than that of hot dip galvanizing coating.