摘要
报道了在GaAs衬底上,采用δ掺杂GaAs/InGaAs双沟道结构,成功地研制出双沟道实空间转移晶体管(RSTT),它具有RSTT典型的"Λ"型负阻I-V特性和较宽的平坦谷值区。具体讨论了湿法腐蚀进行隔离台面,磁控溅射制作电极,快速热退火制作源漏低阻的欧姆接触等工艺步骤。器件的主要负阻参数PVCR可达10,对所研制的RSTT的负阻机制进行了初步探讨。
By adopting δ-doped GaAs/InGaAs pseudomorphic dual channel structure on GaAs substrate, the real space transfer transistor （RSTT） has been fabricated successfully. It has the standard ＂∧＂ shape negative resistance I-V characteristics with a wide and smooth valley region that the conventional RSTT has ever shown. In this paper, the processing on wet etching, metal sputtering, sintering of source and drain contacts were discussed in detail. The peak-to valley current ratio （PVCR） of this device is 10. The negative differential resistance （NDR） mechanism of RSTT was discussed preliminarily.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2008年第3期346-350,共5页
Research & Progress of SSE
基金
国家重点基础研究计划项目(973)(批准号2002CB311905)资助
国家自然科学基金资助项目(批准号60536030)
