摘要
采用磁控溅射技术在Si基底上制备了(Pb1-xSrx)TiO3(简称PST)铁电薄膜,采用双极性、双脉冲方波电压测试了其极化反转特性。测试结果表明,所制备的PST铁电薄膜的电流密度峰值达10-4A/mm2量级,开关时间可达1.0 ms左右,极化反转特性较好,有望未来在Si基集成单片红外探测焦平面阵列研制中加以应用。
The Si-based （Pb1-xSrx）TiO3 ferroelectric thin films were prepared successf magnetron sputtering in this paper. The polarization reversal characteristics of （Pb1-xSrx） ferroelectric thin films were measured by square-wave voltage with double polarity and dou ly by TiO3 e impulse. The density peak of polarization reversal current was 10^-4A/mmz order and polarization reversal time was 1.0 ms or so. The preparation of Si-based ferroelectric thin films with excellent properties is beneficial to the fabrication of Si-based single chip IR focal plane array device.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2008年第3期351-354,共4页
Research & Progress of SSE
基金
教育部光电技术及系统重点实验室资助课题(CETD00-09)
关键词
钛酸锶铅
铁电薄膜
磁控溅射
极化反转
（Pbl-xSrx）TiO3
ferroelectric thin films
magnetron sputtering
polarization reversal
