Mo掺杂对高纯Ce1-xNdxO2-x/2(x=0.10,0.15)体系烧结温度及晶界电性能的影响

Effects of Mo-dopant on Sintering Temperature and Grain Boundary Conductivity of High-purity Ce_(1-x)Nd_xO_(2-x/2)(x=0.10,0.15) Systems

用柠檬酸硝酸盐法制备高纯Ce1-xNdxO2-x/2(x=0.10,0.15)固溶体,加入摩尔分数为5%的Mo,研究了Mo掺杂对烧结温度、结构及电性能的影响.通过X射线衍射、电感偶合等离子体和场发射扫描电镜等手段对氧化物进行了结构表征,采用交流阻抗谱测试其电性能.柠檬酸硝酸盐法制备的前驱体经1450℃烧结24 h得到致密度大于96%的陶瓷材料;加入5%Mo,在1250℃下烧结8 h即可达到理想的致密度(>95%).加入Mo在烧结过程中可加快晶界迁移,促进晶粒生长,显著提高了晶界电导率.在600℃时Ce0.85Nd0.15O1.925的晶界电导率为2.56 S/m,加入Mo后材料的电导率增加到5.62 S/m.

The pure Ce1-xNdxO2-x/2（x =0. 10, 0. 15） solid solutions were synthesized via citric-nitrate method and the effects of 5% （molar fraction） Mo-dopant on the sintering temperature and grain boundary conductivities of theCe1-xNdxO2-x/2（x =0. 10, 0. 15） were discussed. Their structures and ionic conductivities were characterized via X-ray Diffraction （XRD）, Inductively Coupled Plasma （ICP）, field-emission scanning electron microscopy（FE-SEM） and electrochemical impedance spectroscopy（EIS）. The results show that the precurors synthesized via citric-nitrate method have a good sinterability with relative density of 〉 96% after being sintered at 1450℃ for 24 h. With Mo-dopant, the relative density of 〉95% was reached after being sintered at 1250℃ for 8 h and the grain boundary conductivity increased greatly because of the increase of grain size. The grain boundary conductivty at 600℃ for Ceo.ssNdo. 15Oi.925 increased from 2.56 S/m to 5.62 S/m with Mo-dopant.