摘要
采用磁控溅射法在STO(001)基片上沉积钙钛矿结构LCMO薄膜,研究了退火温度对LCMO薄膜微结构及电输运特性的影响.研究结果表明,随退火温度的升高,薄膜中氧含量及Mn4+/Mn3+比逐渐升高,LCMO薄膜中的Mn4+/Mn3+比与薄膜中的氧含量有关,当氧含量增大时,Mn4+/Mn3+比相应增大.LCMO薄膜的电阻率随退火温度升高而逐渐减小,而LCMO薄膜的金属-绝缘相变温度随退火温度升高而逐渐升高,经850℃退火处理的LCMO薄膜的金属-绝缘相变温度可达257 K.
Perovskite LCMO thin film was prepared on STO （001） substrate by magnetron sputtering. The influence of annealing temperature on the transport properties of LCMO thin films was explored. The results show that the content of oxygen and the value of Mn^4＋/Mn^3＋ratio in LCMO thin films increase with the increase of annealing temperatures. The value of Mn^4＋/Mn^3＋ ratio in LCMO thin films is strongly dependent on the content of oxygen. With the increase of the content of oxygen, the value of Mn^4＋/Mn^3＋ ratio in LCMO thin films increases. The resistivity of LCMO thin films decreases with the increase of annealing temperatures. However, the metal-insulator phase transition temperatures increase with the increase of annealing temperatures. The metal-insulator phase transition temperature of LCMO thin film treated by annealing at 850 ℃ can reach to 257 K.
出处
《四川师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2008年第5期597-600,共4页
Journal of Sichuan Normal University（Natural Science）
基金
四川省科技厅应用基础基金(2007J13-005)资助项目
