磁控溅射制备ZnO薄膜的结构及发光特性研究

Structure and Luminescence Properties of ZnO Films Prepared by RF Magnetron Sputtering

采用射频反应磁控溅射法在玻璃衬底上制备出具有c轴高择优取向的ZnO薄膜,利用X射线衍射、扫描探针显微镜及荧光分光光度法研究了生长温度对ZnO薄膜微观结构及光致发光特性的影响。结果表明,合适的衬底温度有利于提高ZnO薄膜的结晶质量;在室温下测量样品的光致发光谱(PL),观察到波长位于400nm左右的紫光、446nm左右的蓝色发光峰及502nm左右微弱的绿光峰,随衬底温度升高,样品的PL谱中紫光及蓝光强度逐渐增大,同时,绿光峰的强度也表现出一定程度的增强。经分析得出紫光应是激子发光所致,而锌填隙则是引起蓝光发射的主要原因,502nm左右的绿光峰应该是氧的深能级缺陷造成的。此外,还测量了样品的吸收谱,并结合样品吸收谱的拟合结果对光致发光机理的分析作了进一步的验证。

ZnO thin films with c-axis preferred orientation were prepared on glass substrates by radio frequency co-reactive magnetron sputtering technique, and the effect of the substrate temperature on the microstructure and the luminescence properties of the ZnO thin films was studied by X-ray diffractometry （XRD）, scanning probe microscopy（SPM）and fluorescence spectrophotometer. The XRD patterns of the four ZnO samples prepared at different substrate temperatures were measured by XRD. The figure which embodied the relation of full wave at half maximum（FWHM） and grain size of the four samples as a function of substrate temperatures was given out, too. It was concluded that the crystallization of the samples was promoted by appropriate substrate temperatures, the results consist with the AFM microscopic photos of the two samples. In addition, the photoluminescence（PL） spectra of the four samples were measured at room temperature. Violet peak located at about 400 nm, blue peak located at 446 nm and green peak located at about 502 nm were observed from the PL spectra of the four samples. With the rise of the growth temperature, the intensity of the violet peak and the blue peak increased sharply, and the intensity of green peak increased at the same time. It was concluded that the violet peak may correspond to the exciton emission, the blue peak was mainly attributed to the interstitial Zinc（Zni） and the green emission peak must be related to the deep level defects of oxygen （VO） in the crystal of ZnO films. Absorption property of the samples were researched by UV spectrophotometer, and the absorption spectrum of the film deposited at 150 ℃ and the （αhν）2 versus hν of the ZnO thin film were given. From the absorption spectrum, it could be observed that the spectroscopic data in UV region showed split peak and shoulder peak. With analysis of the absorption spectrum of the sample deposited at 150 ℃, it was proved that our analysis of the photoluminescence mechanism was reasonable.