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低能宽束离子源的研究进展

Latest development of broad-beam low-energy ion source
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摘要 低能宽束离子源是离子束沉积、刻蚀和表面改性系统的核心部件,综述了考夫曼、射频等离子体、电子回旋共振等离子体、无栅网等四种离子源的等离子体的产生方式,对结构重点进行了分析,并从参数性能上进行了比较。稳定性好、与反应气体兼容的特点使射频和电子回旋共振离子源在低能离子束系统中取得了广泛应用,由于结构简单,束散角大,无栅网离子源目前仅限应用于薄膜沉积和薄膜改性等。 Broad-beam low-energy ion source is a component crucial to ion beam coating/etching and surface modification. The generation of plasma and operating principles of both conventional and newly developed ion beam sources were reviewed including Kaufman, Radio Frequency (RF), electron cyclotron resonance (ECR) and gridless, with the discussion focusing on their structures. The technical performances of these ion beam sources were compared with each other. RF and ECR ion sources have been used widely in low-energy ion beam system due to their excellent stability and compatibility with reactive gases. Gridless ion source is only applied to thin film deposition and modification for its big diverse angle regardless of its simple structure.
出处 《真空》 CAS 北大核心 2008年第5期27-30,共4页 Vacuum
基金 安徽省自然科学基金(No.070412032)
关键词 低能宽束离子源 考夫曼 射频等离子体 电子回旋共振等离子体 无栅网 broad-beam low-energy ion sources Kaufman Radio Frequency (RF) electron cyclotron resonance (ECR) gridless
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  • 1Kaufman H R, Cuomo J J and Harper J M E. Technology and applications of broad-beam ion sources used in sputtering. Part I Ion source technology [J]. J.Vac.Sci. Technol, 1982,21 (3):725-736.
  • 2Scheer H C. Ion sources for dry etching Aspects of reactive ion beam etching for Si technology [J]. Rev.Sci. Instrum. 1992,63(5): 3050-3057.
  • 3刘金声,离子束技术及应用[M].北京:国防工业出版社,1996.
  • 4Korzec D,Engemann J and Rapp J.Performance characteristics of a capacitively coupled 3cm rf ion source [J].Rev. Sci. Instrum., 1992,63:068-3077.
  • 5许沭华,任兆杏,沈克明,翁坚.射频ICP离子源设计研究[J].真空科学与技术,2002,22(4):310-312. 被引量:11
  • 6Hines D S, Williams K E. Patterning of wave guides in LiNbO3 using ion beam etching and reactive ion beam etching [J]. J. Vac. Sci. Technol. A 2002, 20(3):1072.
  • 7Kanarov V, Hayes A V, Yevtukhov R, et al. Thirty-five centimeter diameter radio frequency ion-beam source [J]. Rev. Sci. Instrum., 1998,69(2):874-876.
  • 8Hayes A V, Kanarov V, Yevtukhov R, et al. Recent advances in Veeco's radio frequency ion sources for ionbeam materials processing applications [J]. Rev. Sci. Instrum, 2002,73(2):880.
  • 9Rauschenbach B.Ion beam assisted deposition-a processing technique for preparing thin films for high-technology applications[J]. Vacuum, 2002, 69(1-3):3-10.
  • 10Zeuner M. private communication.

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