电子束蒸发法制备TiO_2薄膜的折射率研究

Study on refractive index of TiO_2 film prepared by electron beam evaporation

用电子束蒸发法制备TiO2薄膜,并对其进行300℃、400℃、850℃热处理和掺杂。详细研究了工艺参数、热处理和掺杂对TiO2薄膜折射率的影响。实验结果表明:镀制高折射率的氧化钛薄膜最佳工艺参数为基片温度200℃、真空度2×10-2Pa、沉积速率0.2nm/s;随着热处理温度的升高,薄膜折射率也逐渐增大;适量掺杂CeO2(CeO2∶TiO2质量比1.7∶12)会提高薄膜的折射率,过量掺杂CeO2反而会降低折射率。

TiO2 thin films were successfully prepared by electron beam evaporation and annealed at 300℃, 400℃ and 850℃ for 2hr. The influences of process parameters, annealing and doping on refractive index of TiO2 film were investigated. Test results showed that the optimal process parameters available to prepare high refractive index films are： substrate temperature 200℃, chamber pressure 2×10^-2 Pa, deposition rate 0.2nm/sec. The refractive index of the films increases with annealing temperature. And the refractive index will increase or decrease if the doping amount of CeO2 [to （CeO2：TiO2 =1.7：1.2）] is appropriate or excessive, respectively.