脉冲激光沉积ZnO薄膜的制备及其性能研究

Preparation of ZnO thin films by PLD and their characteristics

本文用脉冲激光沉积(PLD)法在SiO2基片上制备了ZnO薄膜和Zn1-xMnxO薄膜。X射线衍射、原子力显微镜、紫外-可见光分光光度计对ZnO薄膜的测试结果表明:薄膜具有(103)面的择优取向,表面比较平坦;SiO2基片上制备的薄膜在387nm附近存在明显的吸收边,且薄膜的吸收对基片温度变化不明显。通过对Zn1-xMnxO薄膜的吸收光谱分析得出:Mn离子的掺杂改变了ZnO薄膜的禁带宽度,随着Mn离子掺杂量的增加,薄膜禁带宽度增加;薄膜的光吸收也从直接跃迁过渡为间接跃迁。

ZnO thin films at different substrate temperatures and Zn1-xMnxO thin films were prepared on SiO2 substrates by PLD （pulsed laser deposition）. XRD, AFM and UV-Vis spectrophotometer were employed to characterize the ZnO films. The results indicated that the films have （103） peaks and quite flat surface. Absorption spectra showed that ZnO thin films have obvious absorption edges in the vicinity of 378nm without obvious change found in substrate temperature. The result of analysis of absouption spectrum of Zn1-xMnxO thin films indicated that the Mn-doping changes the forbidden band width of ZnO thin film and the width increases with the increasing doping amount of Mn ions. The light absorption of thin films showed a transition from direct to indirect jump.