Se及Cu_2Se纳米线的大面积合成及其纳米电子学器件性能

Preparation of Se,Cu_2Se nanowires and their nanoelectronic device performance

通过液相化学反应制备了高质量硒(Se)纳米线,同时以Se纳米线为模板,合成了Cu2Se纳米线。利用透射电镜(TEM)、高分辨透射电镜(HRTEM)以及X射线衍射仪(XRD)研究了纳米线的形貌结构特征。结果显示,Se纳米线为单晶结构,生长方向沿其[001]面。结合先进的光刻技术及磁控溅射,成功制备了Se和Cu2Se纳米电子学器件。初步测试表明,这种Se纳米线为p型半导体,而Cu2Se纳米线则表现出明显的相变行为。这些发现有利于开发纳米线场效应晶体管以及相变存储器件方面的应用。

We prepared Se and Cu2Se nanowires （NWs） by a chemical solution process. Transmission Electron Mi- croscopy （TEM）, High resolution TEM （HRTEM） and X-ray diffraction （XRD） were used to characterize the morpholo- gy and structural characterization of the NWs. The results implied that the Se NWs were single crystalline and grew along the c-axis, the direction paralleled to the helical chains of Se atoms. Single Se and Cu2 Se Single Se NW nanoelectronic de- vice were prepared through photolithographic patterning. Our research indicated that the single Se NW device was p-type semiconductors while the Cu2 Se showed very good phase transfer properties. This finding on the Se and Cu2 Se will open broad implications and provide very useful information on quality NW FETs or phase transfer memory device