多弧法沉积Ti(C,N)膜中的CN相

Studies on Ti(C,N) films Deposited by Multi-arc Method

在高速钢基片和〈１００〉单晶硅片上，用多弧法在Ｃ２Ｈ２，Ｎ２，Ａｒ的气氛中电弧蒸发Ｔｉ靶来制备沉积Ｔｉ（Ｃ，Ｎ）膜。总气压在１．２Ｐａ内，起始镀膜温度为２６０℃。Ｔｉ（Ｃ，Ｎ）膜的晶格取向以除了〈１１１〉，〈２００〉，〈２２０〉外，还出现了一些新的衍射峰，配合ＸＰＳ成份分析，本文认为Ｔｉ（Ｃ，Ｎ）膜中有ＣＮ结构相存在。随着Ｃ２Ｈ２／Ｎ２流量比的增加，膜中增加了ＴｉＣ、ＣＮ结构超硬相和石墨相，从而导致了Ｔｉ（Ｃ，Ｎ）薄膜硬度的增加。

The Ti(C,N) films were deposited by multiarc method on the H.S.S substrates and Si <100> wafers with Ti target evaporated by arc in the N2,C2H2,Ar ambient under the following conditions:total pressure 1.2Pa, deposited tempereture 260℃. XRD patterns showed some new diffraction peaks besides TiN or TiC <111>,<200>,<220> preferred orientation. It showed from analyses of XPS and XRD that the phase having CN structure existed in the Ti(C,N) films. TiC phase,the superhardness phase having CN structures and graphite in the films increased with the increase of C2H2/N2 flow ratio. That was why the hardness of Ti(C,N) films enhanced.