大尺寸Si片自旋转磨削表面的损伤分布研究

Study on the SSD Distribution of Large Size Si Wafer Rotational Ground Surface

为了更好地评价大直径Si片磨削加工损伤深度的大小和分布,提高下道抛光工序的效率,采用角度抛光法和方差分析法研究了Si片表面的损伤分布。结果表明,采用自旋转磨削方式磨削的Si片表面的损伤分布不均匀,沿圆周方向在〈110〉晶向处的损伤深度比在〈100〉晶向处的损伤深度大,沿半径方向从圆心到边缘损伤深度逐渐增大,损伤深度的最大差值约为2.0μm。该分布规律对检测损伤深度时样品采集位置的选取及提高抛光加工效率均有重要的指导意义。

In order to evaluate the size and distribution of the subsurface damage （SSD） depth of large size Si wafer and improve the polishing efficiency, the SSD distribution of rotational ground surface was experimentally investigated by angle polishing and variance analysis methods. The results show that the SSD on rotation ground wafer surface is non-uniform, the SSD in the （110） is larger than that in （100）, the SSD increases along the radial direction from the circle center to the edge, the maximum differential value is about 2.0 um. The regularities of distribution are meaningful to guide the sample position choice and improving the efficiency of the next polishing procedure.