电沉积制备CIS太阳能电池吸收层材料

CuInSe_2 Solar Cells Absorption Layer Prepared by Electrodeposition

在Cu衬底上用电沉积的方法沉积金属In,再通过硒蒸气硒化处理成功制备了CuInSe2薄膜。用X射线衍射(XRD)、扫描电镜(SEM)、X射线能谱(EDS)对制备的薄膜进行相组成、微观结构、表面形貌等分析,研究了制备工艺条件对薄膜性能的影响。结果表明:电沉积的In在低温热处理阶段与衬底Cu扩散形成Cu-In合金预制层,预制层在硒化阶段生成CuInSe2,合金中过量Cu生成CuSe表面层,未反应的In转变为Cu16In9,形成Cu衬底/Cu16In9/CuInSe2/CuSe结构。

CuInSe2 thin films ware fabricated on Cu substrates by Se vapour selenization of electrodeposited In precursors thin films. The structure and morphology of the selenized films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, energy dispersive spectroscopy （EDS）. The results indicated that Cu-In alloy film was formed due to the diffusion of electrodeposited in precursors and the Cu substrate at the low temperature anneal stage. The Cn-In alloy was transformed into CuInSe2 phase at the selenization stage. The excessive Cn in the alloy reacted to form CuSe surface layer, and the rest In precursor to form Cu16In9. The structures of the selenized films become Cu substrate/Cu16In9/CuInSe2 absorption layer/CuSe surface layer.