衬底偏压对γ-′Fe_4N薄膜磁性的影响

Effect of Substrate Bias Voltage on Magnetic Properties of γ′-Fe_4N Thin Films

采用直流磁控溅射方法,以Ar/N2(N2/(Ar+N2)=10%)为放电气体,在Si(100)单晶衬底上获得了γ′-Fe4N薄膜样品.利用X射线衍射(XRD)和振动样品磁强计(VSM)研究衬底偏压对γ′-Fe4N薄膜样品的影响.结果表明,随着衬底负偏压的增大,γ′-Fe4N薄膜样品的晶胞参数减小,Fe和N的化合效率与样品的致密度提高,表面缺陷减少,矫顽力降低.

γ＇-Fe4N thin films were deposited on single crystal Si （100） substrate by DC magnetron sputtering using an Ar/N2 gas mixture （N2/（ Ar ＋ N2） = 10% ）. The structure and magnetic properties of the films were characterized via X-ray diffraction （XRD） and superconducting quantum interference device （SQUID）. The effect of substrate bias voltage on magnetic properties of γ＇-Fe4N thin films were investigated. With the increase of substrate bias voltage, the efficiency of the reaction between Fe and N and the growth rate for γ＇-Fe4N were improved, the films obtained were smooth, and the values of M, for all the Fe-N fihns were almost the same, but their coercivity was decreased.